Taiwan Semiconductor Corporation TSM2N7000KCT A3G

TSM2N7000KCT-A3G Taiwan Semiconductor Corporation TSM2N7000KCT A3G
Taiwan Semiconductor Corporation

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Rds On (Max) @ Id, Vgs:
5Ohm @ 100mA, 10V
title:
TSM2N7000KCT A3G
Vgs(th) (Max) @ Id:
2.5V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
60 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
0.4 nC @ 4.5 V
Supplier Device Package:
TO-92
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
300mA (Ta)
Power Dissipation (Max):
400mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TSM2N7000
ECCN:
EAR99
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This is manufactured by Taiwan Semiconductor Corporation. The manufacturer part number is TSM2N7000KCT A3G. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. It has a maximum Rds On and voltage of 5ohm @ 100ma, 10v. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v, 10v. The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 60 pf @ 25 v. The product is available in through hole configuration. The maximum gate charge and given voltages include 0.4 nc @ 4.5 v. to-92 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 300ma (ta). The product carries maximum power dissipation 400mw (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tsm2n7000, a base product number of the product. The product is designated with the ear99 code number.

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Taiwan Semi RoHS(Environmental Information)
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Taiwan Semi REACH(Environmental Information)

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FAQs

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You can order Taiwan Semiconductor Corporation brand products with TSM2N7000KCT A3G directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
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You will get a confirmation email regarding your order of Taiwan Semiconductor Corporation TSM2N7000KCT A3G. You can also check on our website or by contacting our customer support team for further order details on Taiwan Semiconductor Corporation TSM2N7000KCT A3G.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16678303 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Taiwan Semiconductor Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16678303.
Yes. We ship TSM2N7000KCT A3G Internationally to many countries around the world.