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Taiwan Semiconductor Corporation TSM2301BCX RFG

Taiwan Semiconductor Corporation

Product Information

Rds On (Max) @ Id, Vgs:
100mOhm @ 2.8A, 4.5V
Detailed Description:
P-Channel 20V 2.8A (Tc) 900mW (Ta) Surface Mount SOT-23
Input Capacitance (Ciss) (Max) @ Vds:
415pF @ 6V
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
950mV @ 250µA
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Gate Charge (Qg) (Max) @ Vgs:
4.5nC @ 4.5V
Supplier Device Package:
SOT-23
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
900mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
2.8A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Taiwan Semiconductor Corporation
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This is manufactured by Taiwan Semiconductor Corporation. The manufacturer part number is TSM2301BCX RFG. It has a maximum Rds On and voltage of 100mohm @ 2.8a, 4.5v. It features p-channel 20v 2.8a (tc) 900mw (ta) surface mount sot-23. The product's input capacitance at maximum includes 415pf @ 6v. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 950mv @ 250µa. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The maximum gate charge and given voltages include 4.5nc @ 4.5v. sot-23 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The product carries maximum power dissipation 900mw (ta). The continuous current drain at 25°C is 2.8a (tc). This product use mosfet (metal oxide) technology. The taiwan semiconductor corporation's product offers user-desired applications.

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TSM2301B(Datasheets)

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