Microsemi Corporation APTM100DA40T1G

Microsemi Corporation

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 2.5mA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
SP1
Gate Charge (Qg) (Max) @ Vgs:
260 nC @ 10 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
480mOhm @ 16A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
1000 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
357W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
6800 pF @ 25 V
Mounting Type:
Chassis Mount
Series:
-
Supplier Device Package:
SP1
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Microsemi Corporation. The manufacturer part number is APTM100DA40T1G. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 2.5ma. The product has -40°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sp1. The maximum gate charge and given voltages include 260 nc @ 10 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 480mohm @ 16a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 1000 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 357w (tc). The product's input capacitance at maximum includes 6800 pf @ 25 v. The product is available in chassis mount configuration. sp1 is the supplier device package value. The continuous current drain at 25°C is 20a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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APTM100DA40T1G(Datasheets)
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Microchip CA Prop65(Environmental Information)
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Microchip RoHS(Environmental Information)
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Microchip REACH(Environmental Information)

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