Deliver to
United Kingdom
This is manufactured by Microsemi Corporation. The manufacturer part number is APT10M09B2VFRG. It has a maximum Rds On and voltage of 9mohm @ 50a, 10v. It features n-channel 100v 100a (tc) 625w (tc) through hole t-max™ [b2]. The product's input capacitance at maximum includes 9875pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 4v @ 2.5ma. The product power mos v®, is a highly preferred choice for users. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 350nc @ 10v. t-max™ [b2] is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-247-3 variant. The product carries maximum power dissipation 625w (tc). The product has a 100v drain to source voltage. The continuous current drain at 25°C is 100a (tc). This product use mosfet (metal oxide) technology. The microsemi corporation's product offers user-desired applications.
For more information please check the datasheets.
Basket Total:
£ 0
