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This is manufactured by Infineon Technologies. The manufacturer part number is IPP12CNE8N G. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 83µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 12.9mohm @ 67a, 10v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 85 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 3 (168 hours). The product carries maximum power dissipation 125w (tc). The product's input capacitance at maximum includes 4340 pf @ 40 v. The product is available in through hole configuration. The product optimos™, is a highly preferred choice for users. The maximum gate charge and given voltages include 64 nc @ 10 v. pg-to220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 67a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ipp12c, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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