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This is manufactured by Infineon Technologies. The manufacturer part number is IPI35CN10N G. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 29µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i2pak, to-262aa. It has a maximum Rds On and voltage of 35mohm @ 27a, 10v. The maximum gate charge and given voltages include 24 nc @ 10 v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 58w (tc). The product's input capacitance at maximum includes 1570 pf @ 50 v. The product is available in through hole configuration. The product optimos™, is a highly preferred choice for users. pg-to262-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 27a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ipi35c, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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