Infineon Technologies IPD26N06S2L35ATMA1

IPD26N06S2L35ATMA1 Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 26µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
35mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs:
24 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
55 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
621 pF @ 25 V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Supplier Device Package:
PG-TO252-3-11
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPD26N
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is IPD26N06S2L35ATMA1. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2v @ 26µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 35mohm @ 13a, 10v. The maximum gate charge and given voltages include 24 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 55 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 68w (tc). The product's input capacitance at maximum includes 621 pf @ 25 v. The product is available in surface mount configuration. The product optimos™, is a highly preferred choice for users. pg-to252-3-11 is the supplier device package value. The continuous current drain at 25°C is 30a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ipd26n, a base product number of the product. The product is designated with the ear99 code number.

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Mult Dev Wafer Fab 12/Feb/2019(PCN Assembly/Origin)
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Cover Tape Width Update 17/Jun/2015(PCN Packaging)
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Cover Tape Width Cancellation 14/Jul/2015(PCN Packaging)
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Part Number Guide(Other Related Documents)

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FAQs

Yes. You can also search IPD26N06S2L35ATMA1 on website for other similar products.
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You can order Infineon Technologies brand products with IPD26N06S2L35ATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon Technologies IPD26N06S2L35ATMA1. You can also check on our website or by contacting our customer support team for further order details on Infineon Technologies IPD26N06S2L35ATMA1.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET15880617 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon Technologies" products on our website by using Enrgtech's Unique Manufacturing Part Number ET15880617.
Yes. We ship IPD26N06S2L35ATMA1 Internationally to many countries around the world.