Infineon Technologies IPB65R190C6ATMA1

IPB65R190C6ATMA1 Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.5V @ 730µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
190mOhm @ 7.3A, 10V
Gate Charge (Qg) (Max) @ Vgs:
73 nC @ 10 V
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
151W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1620 pF @ 100 V
Mounting Type:
Surface Mount
Series:
CoolMOS™
Supplier Device Package:
PG-TO263-3
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
20.2A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPB65R
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is IPB65R190C6ATMA1. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.5v @ 730µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 190mohm @ 7.3a, 10v. The maximum gate charge and given voltages include 73 nc @ 10 v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 650 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 151w (tc). The product's input capacitance at maximum includes 1620 pf @ 100 v. The product is available in surface mount configuration. The product coolmos™, is a highly preferred choice for users. pg-to263-3 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 20.2a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ipb65r, a base product number of the product. The product is designated with the ear99 code number.

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IPx65R190C6(Datasheets)

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