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This is manufactured by Infineon Technologies. The manufacturer part number is IPB35N12S3L26ATMA1. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 26.3mohm @ 35a, 10v. The typical Vgs (th) (max) of the product is 2.4v @ 39µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 120 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 71w (tc). The product's input capacitance at maximum includes 2700 pf @ 25 v. The product is available in surface mount configuration. The product is automotive, a grade of class. The product optimos™, is a highly preferred choice for users. The maximum gate charge and given voltages include 30 nc @ 10 v. pg-to263-3-2 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 35a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ip35n, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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