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This is manufactured by Infineon Technologies. The manufacturer part number is BSZ0901NSIATMA1. The FET features of the product include schottky diode (body). It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 2.1mohm @ 20a, 10v. The typical Vgs (th) (max) of the product is 2.2v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2.1w (ta), 69w (tc). It has a long 20 weeks standard lead time. The product's input capacitance at maximum includes 2600 pf @ 15 v. The product is available in surface mount configuration. The product optimos™, is a highly preferred choice for users. The maximum gate charge and given voltages include 41 nc @ 10 v. pg-tsdson-8-fl is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 25a (ta), 40a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to bsz0901, a base product number of the product. The product is designated with the ear99 code number.
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