Infineon Technologies BSP170PE6327T

BSP170PE6327T Infineon Technologies
Infineon Technologies

Product Information

Rds On (Max) @ Id, Vgs:
300mOhm @ 1.9A, 10V
Detailed Description:
P-Channel 60V 1.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Input Capacitance (Ciss) (Max) @ Vds:
410pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 250µA
Series:
SIPMOS®
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
14nC @ 10V
Supplier Device Package:
PG-SOT223-4
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
TO-261-4, TO-261AA
Power Dissipation (Max):
1.8W (Ta)
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
1.9A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Infineon Technologies
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This is manufactured by Infineon Technologies. The manufacturer part number is BSP170PE6327T. It has a maximum Rds On and voltage of 300mohm @ 1.9a, 10v. It features p-channel 60v 1.9a (ta) 1.8w (ta) surface mount pg-sot223-4. The product's input capacitance at maximum includes 410pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product sipmos®, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 14nc @ 10v. pg-sot223-4 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in to-261-4, to-261aa. The product carries maximum power dissipation 1.8w (ta). The product has a 60v drain to source voltage. The continuous current drain at 25°C is 1.9a (ta). This product use mosfet (metal oxide) technology. The infineon technologies's product offers user-desired applications.

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