Infineon Technologies BSB165N15NZ3GXUMA1

BSB165N15NZ3GXUMA1 Infineon Technologies
Infineon Technologies

Product Information

Detailed Description:
N-Channel 150V 9A (Ta), 45A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id:
4V @ 110µA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
3-WDSON
Base Part Number:
BSB165
Gate Charge (Qg) (Max) @ Vgs:
35nC @ 10V
Rds On (Max) @ Id, Vgs:
16.5mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
8V, 10V
Manufacturer:
Infineon Technologies
Drain to Source Voltage (Vdss):
150V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2800pF @ 75V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Supplier Device Package:
MG-WDSON-2, CanPAK M™
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
9A (Ta), 45A (Tc)
Customer Reference:
Power Dissipation (Max):
2.8W (Ta), 78W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Infineon Technologies. The manufacturer part number is BSB165N15NZ3GXUMA1. It features n-channel 150v 9a (ta), 45a (tc) 2.8w (ta), 78w (tc) surface mount mg-wdson-2, canpak m™. The typical Vgs (th) (max) of the product is 4v @ 110µa. The product has -40°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 3-wdson. Base Part Number: bsb165. The maximum gate charge and given voltages include 35nc @ 10v. It has a maximum Rds On and voltage of 16.5mohm @ 30a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 8v, 10v. The infineon technologies's product offers user-desired applications. The product has a 150v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 2800pf @ 75v. The product is available in surface mount configuration. The product optimos™, is a highly preferred choice for users. mg-wdson-2, canpak m™ is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 9a (ta), 45a (tc). The product carries maximum power dissipation 2.8w (ta), 78w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev Site Add 30/Dec/2020(PCN Assembly/Origin)
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Mult Dev Reel Design Chg 2/Dec/2019(PCN Packaging)
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Mult Dev Pkg Box Chg 3/Jan/2018(PCN Packaging)
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Part Number Guide(Other Related Documents)

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FAQs

Yes. You can also search BSB165N15NZ3GXUMA1 on website for other similar products.
We accept all major payment methods for all products including ET15877605. Please check your shopping cart at the time of order.
You can order Infineon Technologies brand products with BSB165N15NZ3GXUMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon Technologies BSB165N15NZ3GXUMA1. You can also check on our website or by contacting our customer support team for further order details on Infineon Technologies BSB165N15NZ3GXUMA1.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET15877605 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon Technologies" products on our website by using Enrgtech's Unique Manufacturing Part Number ET15877605.
Yes. We ship BSB165N15NZ3GXUMA1 Internationally to many countries around the world.