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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPCF8B01(TE85L,F,M. The FET features of the product include schottky diode (isolated). It features p-channel 20v 2.7a (ta) 330mw (ta) surface mount vs-8 (2.9x1.5). The typical Vgs (th) (max) of the product is 1.2v @ 200µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-smd, flat lead. Base Part Number: tk40. The maximum gate charge and given voltages include 6nc @ 5v. It has a maximum Rds On and voltage of 110mohm @ 1.4a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 470pf @ 10v. The product is available in surface mount configuration. The product u-mosiii, is a highly preferred choice for users. vs-8 (2.9x1.5) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 2.7a (ta). The product carries maximum power dissipation 330mw (ta). This product use mosfet (metal oxide) technology.
For more information please check the datasheets.
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