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United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPCC8001-H(TE12LQM. It features n-channel 30v 22a (ta) 700mw (ta), 30w (tc) surface mount 8-tson advance (3.3x3.3). The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. Base Part Number: rn4981. The maximum gate charge and given voltages include 27nc @ 10v. It has a maximum Rds On and voltage of 8.3mohm @ 11a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 2500pf @ 10v. The product is available in surface mount configuration. The product u-mosv-h, is a highly preferred choice for users. 8-tson advance (3.3x3.3) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 22a (ta). The product carries maximum power dissipation 700mw (ta), 30w (tc). This product use mosfet (metal oxide) technology.
For more information please check the datasheets.
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