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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPC8A05-H(TE12L,QM. The FET features of the product include schottky diode (body). It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.3v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.173", 4.40mm width). The maximum gate charge and given voltages include 15 nc @ 10 v. It has a maximum Rds On and voltage of 13.3mohm @ 5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1w (ta). The product's input capacitance at maximum includes 1700 pf @ 10 v. The product is available in surface mount configuration. The product u-mosv-h, is a highly preferred choice for users. 8-sop (5.5x6.0) is the supplier device package value. The continuous current drain at 25°C is 10a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tpc8a05, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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