Toshiba Semiconductor and Storage TPC8109(TE12L)

TPC8109-TE12L- Toshiba Semiconductor and Storage TPC8109(TE12L)
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
RoHS non-compliant
Package / Case:
8-SOIC (0.173", 4.40mm Width)
Rds On (Max) @ Id, Vgs:
20mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
Vgs(th) (Max) @ Id:
2V @ 1mA
FET Type:
P-Channel
Drain to Source Voltage (Vdss):
30 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
2260 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOP (5.5x6.0)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPC8109
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPC8109(TE12L). It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs non-compliant. Moreover, the product comes in 8-soic (0.173", 4.40mm width). It has a maximum Rds On and voltage of 20mohm @ 5a, 10v. The maximum gate charge and given voltages include 45 nc @ 10 v. The typical Vgs (th) (max) of the product is 2v @ 1ma. It carries FET type p-channel. The product has a 30 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 2260 pf @ 10 v. The product is available in surface mount configuration. 8-sop (5.5x6.0) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 10a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tpc8109, a base product number of the product. The product is designated with the ear99 code number.

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TPC8109(Datasheets)
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Mosfets Prod Guide(Datasheets)

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