Deliver to
United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPC8035-H(TE12L,QM. It features n-channel 30v 18a (ta) 1w (ta) surface mount 8-sop (5.5x6.0). The typical Vgs (th) (max) of the product is 2.3v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.173", 4.40mm width). Base Part Number: tlp781. The maximum gate charge and given voltages include 82nc @ 10v. It has a maximum Rds On and voltage of 3.2mohm @ 9a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 7800pf @ 10v. The product is available in surface mount configuration. The product u-mosvi-h, is a highly preferred choice for users. 8-sop (5.5x6.0) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 18a (ta). The product carries maximum power dissipation 1w (ta). This product use mosfet (metal oxide) technology.
For more information please check the datasheets.
Basket Total:
£ 0
