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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPC6006-H(TE85L,F). It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 2.3v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 75mohm @ 1.9a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 700mw (ta). The product's input capacitance at maximum includes 251 pf @ 10 v. The product is available in surface mount configuration. The product u-mosiii-h, is a highly preferred choice for users. The maximum gate charge and given voltages include 4.4 nc @ 10 v. vs-6 (2.9x2.8) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 3.9a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tpc6006, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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