Toshiba Semiconductor and Storage SSM3K35MFV,L3F

Enrgtech Part No: ET14928550
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Manufacturer Part No:
SSM3K35MFV,L3F
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Manufacturer: Toshiba Semiconductor and Storage

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Product Information

FET Feature:

HTSUS:

8541.21.0095

RoHS Status:

RoHS Compliant

Operating Temperature:

150°C

Package / Case:

SOT-723

Rds On (Max) @ Id, Vgs:

3Ohm @ 50mA, 4V

title:

SSM3K35MFV,L3F

Vgs(th) (Max) @ Id:

1V @ 1mA

edacadModel:

SSM3K35MFV,L3F Models

FET Type:

N-Channel

Drive Voltage (Max Rds On, Min Rds On):

1.2V, 4V

edacadModelUrl:

/en/models/7809541

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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3K35MFV,L3F. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs compliant. The product has 150°c operating temperature range. Moreover, the product comes in sot-723. It has a maximum Rds On and voltage of 3ohm @ 50ma, 4v. The typical Vgs (th) (max) of the product is 1v @ 1ma. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.2v, 4v. The product has a 20 v drain to source voltage. The maximum Vgs rate is ±10v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 9.5 pf @ 3 v. The product is available in surface mount configuration. vesm is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 180ma (ta). The product carries maximum power dissipation 150mw (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm3k35, a base product number of the product. The product is designated with the ear99 code number.

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