Toshiba Semiconductor and Storage 2SK3906(Q)

Enrgtech Part No: ET14928023
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Manufacturer Part No:
2SK3906(Q)
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Manufacturer: Toshiba Semiconductor and Storage

2SK3906-Q- Toshiba Semiconductor and Storage 2SK3906(Q)

Product Information

FET Feature:

HTSUS:

8541.29.0095

Vgs(th) (Max) @ Id:

4V @ 1mA

Operating Temperature:

150°C (TJ)

Package / Case:

TO-3P-3, SC-65-3

Rds On (Max) @ Id, Vgs:

330mOhm @ 10A, 10V

title:

2SK3906(Q)

edacadModel:

2SK3906(Q) Models

FET Type:

N-Channel

Drive Voltage (Max Rds On, Min Rds On):

10V

edacadModelUrl:

/en/models/2062712

Drain to Source Voltage (Vdss):

600 V

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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SK3906(Q). It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-3p-3, sc-65-3. It has a maximum Rds On and voltage of 330mohm @ 10a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 150w (tc). The product's input capacitance at maximum includes 4250 pf @ 25 v. The product is available in through hole configuration. The maximum gate charge and given voltages include 60 nc @ 10 v. to-3p(n) is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 20a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to 2sk3906, a base product number of the product. The product is designated with the ear99 code number.

Mosfets Prod Guide(Datasheets)

2SK3906(Datasheets)

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