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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SK3313(Q). It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 620mohm @ 6a, 10v. The maximum gate charge and given voltages include 45 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 500 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 40w (tc). The product's input capacitance at maximum includes 2040 pf @ 10 v. The product is available in through hole configuration. to-220nis is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 12a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to 2sk3313, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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