Toshiba Semiconductor and Storage 2SJ360(F)

Enrgtech Part No: ET14927954
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Manufacturer Part No:
2SJ360(F)
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Manufacturer: Toshiba Semiconductor and Storage

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Product Information

FET Feature:

HTSUS:

8541.21.0095

Vgs(th) (Max) @ Id:

2V @ 1mA

Operating Temperature:

150°C (TJ)

Package / Case:

TO-243AA

Rds On (Max) @ Id, Vgs:

730mOhm @ 500mA, 10V

title:

2SJ360(F)

FET Type:

P-Channel

Drive Voltage (Max Rds On, Min Rds On):

4V, 10V

Drain to Source Voltage (Vdss):

60 V

Vgs (Max):

±20V

Moisture Sensitivity Level (MSL):

1 (Unlimited)

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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SJ360(F). It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 2v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-243aa. It has a maximum Rds On and voltage of 730mohm @ 500ma, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 500mw (ta). The product's input capacitance at maximum includes 155 pf @ 10 v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 6.5 nc @ 10 v. pw-mini is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 1a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to 2sj360, a base product number of the product. The product is designated with the ear99 code number.

2SJ360(Datasheets)

Mosfets Prod Guide(Datasheets)

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