Maximum Continuous Drain Current:
2 A
Transistor Material:
Si
Width:
1.4mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
0.46V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
2 nC @ 4.5 V
Channel Type:
N
Length:
3.04mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
3 W
Series:
TrenchFET
Maximum Gate Source Voltage:
±8 V
Height:
1.02mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
600 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
240mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
2.5 nC @ 4.5 V
Vgs(th) (Max) @ Id:
1V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
330 pF @ 25 V
Qualification:
AEC-Q101
standardLeadTime:
17 Weeks
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
TrenchFET®
Supplier Device Package:
SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C:
2A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQ2364
ECCN:
EAR99
