Deliver to
United Kingdom
This is manufactured by Vishay Siliconix. The manufacturer part number is SIRC18DP-T1-GE3. The FET features of the product include schottky diode (body). It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® so-8. It has a maximum Rds On and voltage of 1.1mohm @ 15a, 10v. The maximum gate charge and given voltages include 111 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is +20v, -16v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 54.3w (tc). The product's input capacitance at maximum includes 5060 pf @ 15 v. It has a long 14 weeks standard lead time. The product is available in surface mount configuration. The product trenchfet® gen iv, is a highly preferred choice for users. powerpak® so-8 is the supplier device package value. The continuous current drain at 25°C is 60a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sirc18, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
Basket Total:
£ 0
