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This is manufactured by Vishay Siliconix. The manufacturer part number is SIR798DP-T1-GE3. The FET features of the product include schottky diode (body). It features n-channel 30v 60a (tc) 83w (tc) surface mount powerpak® so-8. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® so-8. Base Part Number: sir798. The maximum gate charge and given voltages include 130nc @ 10v. It has a maximum Rds On and voltage of 2.05ohm @ 20a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The vishay siliconix's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 5050pf @ 15v. The product is available in surface mount configuration. powerpak® so-8 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 60a (tc). The product carries maximum power dissipation 83w (tc). This product use mosfet (metal oxide) technology.
For more information please check the datasheets.
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