Vishay Siliconix SI4403BDY-T1-GE3

SI4403BDY-T1-GE3 Vishay Siliconix
SI4403BDY-T1-GE3
Vishay Siliconix

Product Information

Base Part Number:
SI4403
Detailed Description:
P-Channel 20V 7.3A (Ta) 1.35W (Ta) Surface Mount 8-SO
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 350µA
Series:
TrenchFET®
Vgs (Max):
±8V
Gate Charge (Qg) (Max) @ Vgs:
50nC @ 5V
Rds On (Max) @ Id, Vgs:
17mOhm @ 9.9A, 4.5V
Supplier Device Package:
8-SO
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Power Dissipation (Max):
1.35W (Ta)
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
7.3A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Vishay Siliconix
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI4403BDY-T1-GE3. Base Part Number: si4403. It features p-channel 20v 7.3a (ta) 1.35w (ta) surface mount 8-so. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 350µa. The product trenchfet®, is a highly preferred choice for users. The maximum Vgs rate is ±8v. The maximum gate charge and given voltages include 50nc @ 5v. It has a maximum Rds On and voltage of 17mohm @ 9.9a, 4.5v. 8-so is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in 8-soic (0.154", 3.90mm width). The product carries maximum power dissipation 1.35w (ta). The product has a 20v drain to source voltage. The continuous current drain at 25°C is 7.3a (ta). This product use mosfet (metal oxide) technology. The vishay siliconix's product offers user-desired applications.

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SIL-0632014 16/Apr/2014(PCN Obsolescence/ EOL)
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SI4403BDY(Datasheets)

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