Vishay Siliconix SI4190DY-T1-GE3

SI4190DY-T1-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.8V @ 250µA
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
58 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
8.8mOhm @ 15A, 10V
FET Type:
N-Channel
Package:
Cut Tape (CT)
Drain to Source Voltage (Vdss):
100 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
2000 pF @ 50 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI4190
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI4190DY-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.8v @ 250µa. Moreover, the product comes in 8-soic (0.154", 3.90mm width). The maximum gate charge and given voltages include 58 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 8.8mohm @ 15a, 10v. It carries FET type n-channel. It is shipped in cut tape (ct) package . The product has a 100 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 2000 pf @ 50 v. The product is available in surface mount configuration. 8-soic is the supplier device package value. The continuous current drain at 25°C is 20a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to si4190, a base product number of the product. The product is designated with the ear99 code number.

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Multiple Fabracation Changes09/Jul/2014(PCN Assembly/Origin)
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SI4190DY(Datasheets)
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SIL-1072014 Rev0 17/Dec/2014(PCN Obsolescence/ EOL)

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FAQs

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