Vishay Siliconix SI3475DV-T1-GE3

SI3475DV-T1-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
1.61Ohm @ 900mA, 10V
title:
SI3475DV-T1-GE3
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drain to Source Voltage (Vdss):
200 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
500 pF @ 50 V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 10 V
Supplier Device Package:
6-TSOP
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
950mA (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI3475
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI3475DV-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 1.61ohm @ 900ma, 10v. The typical Vgs (th) (max) of the product is 4v @ 250µa. In addition, it is reach unaffected. It carries FET type p-channel. The product has a 200 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 500 pf @ 50 v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 18 nc @ 10 v. 6-tsop is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 950ma (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to si3475, a base product number of the product. The product is designated with the ear99 code number.

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SIL-1072014 Rev0 17/Dec/2014(PCN Obsolescence/ EOL)

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FAQs

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