Vishay Siliconix SI2351DS-T1-GE3

SI2351DS-T1-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
115mOhm @ 2.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
5.1 nC @ 5 V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drain to Source Voltage (Vdss):
20 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
250 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
2.8A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI2351
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI2351DS-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 115mohm @ 2.4a, 4.5v. The maximum gate charge and given voltages include 5.1 nc @ 5 v. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. In addition, it is reach unaffected. It carries FET type p-channel. The product has a 20 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 250 pf @ 10 v. The product is available in surface mount configuration. sot-23-3 (to-236) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 2.8a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to si2351, a base product number of the product. The product is designated with the ear99 code number.

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SIL-1072014 Rev0 17/Dec/2014(PCN Obsolescence/ EOL)
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Material Compliance(Environmental Information)
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Vishay Aluminum Capacitor and Energy Storage REACH(Environmental Information)

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