Category:
Power MOSFET
Dimensions:
5.1 x 5.1 x 0.95mm
Maximum Continuous Drain Current:
7 A
Transistor Material:
Si
Width:
5.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
5V
Package Type:
PowerFLAT
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
15 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
690 pF@ 10 V
Length:
5.1mm
Pin Count:
14
Typical Turn-Off Delay Time:
50 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Series:
MDmesh M5
Maximum Gate Source Voltage:
±25 V
Height:
0.95mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
600 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
14-PowerVQFN
Rds On (Max) @ Id, Vgs:
600mOhm @ 3.5A, 10V
title:
STL8N65M5
Vgs(th) (Max) @ Id:
5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STL8N65M5 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/2756491
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Ta), 70W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
690 pF @ 100 V
Mounting Type:
Surface Mount
Series:
MDmesh™ V
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 10 V
Supplier Device Package:
PowerFLAT™ (5x5)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
1.4A (Ta), 7A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STL8
ECCN:
EAR99
