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Fairchild Semiconductor FDB86102LZ

FDB86102LZ Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
24mOhm @ 8.3A, 10V
Gate Charge (Qg) (Max) @ Vgs:
21 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Power Dissipation (Max):
3.1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
1275 pF @ 50 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
TO-263 (D2PAK)
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
8.3A (Ta), 30A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FDB86102LZ. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 24mohm @ 8.3a, 10v. The maximum gate charge and given voltages include 21 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 3.1w (ta). The product's input capacitance at maximum includes 1275 pf @ 50 v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. to-263 (d2pak) is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 8.3a (ta), 30a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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