Toshiba Semiconductor and Storage TK8A45DA(STA4,Q,M)

TK8A45DA-STA4-Q-M- Toshiba Semiconductor and Storage TK8A45DA(STA4,Q,M)
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
FET Type:
N-Channel
Drain to Source Voltage (Vdss):
450 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
-
standardLeadTime:
32 Weeks
Mounting Type:
Through Hole
Series:
π-MOSVII
Supplier Device Package:
TO-220SIS
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
7.5A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK8A45
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK8A45DA(STA4,Q,M). It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Moreover, the product comes in to-220-3 full pack. It carries FET type n-channel. The product has a 450 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 32 weeks standard lead time. The product is available in through hole configuration. The product π-mosvii, is a highly preferred choice for users. to-220sis is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 7.5a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk8a45, a base product number of the product. The product is designated with the ear99 code number.

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Mosfets Prod Guide(Datasheets)

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