Toshiba Semiconductor and Storage TK4A65DA(STA4,Q,M)

TK4A65DA-STA4-Q-M- Toshiba Semiconductor and Storage TK4A65DA(STA4,Q,M)
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
RoHS Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
1.9Ohm @ 1.8A, 10V
title:
TK4A65DA(STA4,Q,M)
Vgs(th) (Max) @ Id:
4.4V @ 1mA
edacadModel:
TK4A65DA(STA4,Q,M) Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/2768871
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
600 pF @ 25 V
Mounting Type:
Through Hole
Series:
π-MOSVII
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 10 V
Supplier Device Package:
TO-220SIS
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
3.5A (Ta)
Power Dissipation (Max):
35W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK4A65
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK4A65DA(STA4,Q,M). It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 1.9ohm @ 1.8a, 10v. The typical Vgs (th) (max) of the product is 4.4v @ 1ma. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 600 pf @ 25 v. The product is available in through hole configuration. The product π-mosvii, is a highly preferred choice for users. The maximum gate charge and given voltages include 12 nc @ 10 v. to-220sis is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 3.5a (ta). The product carries maximum power dissipation 35w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk4a65, a base product number of the product. The product is designated with the ear99 code number.

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