Microsemi Corporation APT25SM120B

Microsemi Corporation

Product Information

Rds On (Max) @ Id, Vgs:
175mOhm @ 10A, 20V
Detailed Description:
N-Channel 1200V 25A (Tc) 175W (Tc) Through Hole TO-247
Drive Voltage (Max Rds On, Min Rds On):
20V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Drain to Source Voltage (Vdss):
1200V
Vgs (Max):
+25V, -10V
Gate Charge (Qg) (Max) @ Vgs:
72nC @ 20V
Supplier Device Package:
TO-247
Packaging:
Bulk
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-247-3
Power Dissipation (Max):
175W (Tc)
Current - Continuous Drain (Id) @ 25°C:
25A (Tc)
Technology:
SiCFET (Silicon Carbide)
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT25SM120B. It has a maximum Rds On and voltage of 175mohm @ 10a, 20v. It features n-channel 1200v 25a (tc) 175w (tc) through hole to-247. The drive voltage (maximum and minimum Rds On) of the product includes 20v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has a 1200v drain to source voltage. The maximum Vgs rate is +25v, -10v. The maximum gate charge and given voltages include 72nc @ 20v. to-247 is the supplier device package value. In addition, bulk is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-247-3. The product carries maximum power dissipation 175w (tc). The continuous current drain at 25°C is 25a (tc). This product use sicfet (silicon carbide) technology. The microsemi corporation's product offers user-desired applications.

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Mult Devices 16/Oct/2017(PCN Obsolescence/ EOL)

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