Maximum Continuous Drain Current:
52 A
Transistor Material:
Si
Width:
5.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
300 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
110 nC @ 10 V
Channel Type:
N
Length:
16.26mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
400 W
Series:
HiperFET, Polar
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
21.46mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
66 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 4mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
66mOhm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
110 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
300 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
400W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3490 pF @ 25 V
standardLeadTime:
41 Weeks
Mounting Type:
Through Hole
Series:
HiPerFET™, Polar
Supplier Device Package:
TO-247AD (IXFH)
Current - Continuous Drain (Id) @ 25°C:
52A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFH52
ECCN:
EAR99
This is manufactured by IXYS. The manufacturer part number is IXFH52N30P. While 52 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.3mm wide. The product offers single transistor configuration. It has a maximum of 300 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-247. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 110 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 16.26mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 400 w maximum power dissipation. The product hiperfet, polar, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 21.46mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 66 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 4ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 66mohm @ 500ma, 10v. The maximum gate charge and given voltages include 110 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 300 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 400w (tc). The product's input capacitance at maximum includes 3490 pf @ 25 v. It has a long 41 weeks standard lead time. The product hiperfet™, polar, is a highly preferred choice for users. to-247ad (ixfh) is the supplier device package value. The continuous current drain at 25°C is 52a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixfh52, a base product number of the product. The product is designated with the ear99 code number.
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