Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Width:
1.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.15V
Package Type:
DSBGA
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.55V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.3 nC @ 4.5 V
Channel Type:
P
Length:
1mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
750 mW
Series:
NexFET
Maximum Gate Source Voltage:
-8 V, +8 V
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
Maximum Drain Source Resistance:
92 mΩ
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.15V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UFBGA, DSBGA
Rds On (Max) @ Id, Vgs:
32.5mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
4.4 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
CSD25304W1015T Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
edacadModelUrl:
/en/models/4959467
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
595 pF @ 10 V
standardLeadTime:
12 Weeks
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
6-DSBGA (1x1.5)
Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD25304W1015
ECCN:
EAR99
