Category:
Power MOSFET
Dimensions:
10.4 x 9.35 x 4.6mm
Maximum Continuous Drain Current:
40 A
Transistor Material:
Si
Width:
9.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
2.5V
Maximum Drain Source Resistance:
33 mΩ
Package Type:
D2PAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
46 nC @ 5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2300 pF@ 25 V
Length:
10.4mm
Pin Count:
3
Typical Turn-Off Delay Time:
64 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
150 W
Series:
STripFET II
Maximum Gate Source Voltage:
-15 V, +15 V
Height:
4.6mm
Typical Turn-On Delay Time:
25 ns
Minimum Operating Temperature:
-65 °C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-65°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
33mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs:
64 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STB40NF10LT4 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
edacadModelUrl:
/en/models/686415
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±15V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2300 pF @ 25 V
standardLeadTime:
26 Weeks
Mounting Type:
Surface Mount
Series:
STripFET™ II
Supplier Device Package:
D2PAK
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STB40
ECCN:
EAR99
