Maximum Continuous Drain Current:
6 A
Transistor Material:
Si
Width:
2.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Maximum Gate Threshold Voltage:
5V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
16.5 nC @ 10 V
Channel Type:
N
Length:
6.6mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
110 W
Series:
MDmesh K5, SuperMESH5
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
6.2mm
Maximum Drain Source Resistance:
950 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Rds On (Max) @ Id, Vgs:
950mOhm @ 3A, 10V
title:
STU8N80K5
Vgs(th) (Max) @ Id:
5V @ 100µA
REACH Status:
REACH Unaffected
edacadModel:
STU8N80K5 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/3993111
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
110W (Tc)
standardLeadTime:
14 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
450 pF @ 100 V
Mounting Type:
Through Hole
Series:
SuperMESH5™
Gate Charge (Qg) (Max) @ Vgs:
16.5 nC @ 10 V
Supplier Device Package:
TO-251 (IPAK)
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STU8N80
ECCN:
EAR99
