Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Width:
3.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
6.4 nC @ 10 V
Channel Type:
P
Length:
6.7mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.6 W
Series:
STripFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.8mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
160 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Rds On (Max) @ Id, Vgs:
160mOhm @ 1.5A, 10V
title:
STN3P6F6
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STN3P6F6 Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/3874233
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.6W (Tc)
standardLeadTime:
26 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
340 pF @ 48 V
Mounting Type:
Surface Mount
Series:
DeepGATE™, STripFET™ VI
Gate Charge (Qg) (Max) @ Vgs:
6.4 nC @ 10 V
Supplier Device Package:
SOT-223
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
3A (Tj)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STN3
ECCN:
EAR99
