Maximum Continuous Drain Current:
60 A
Transistor Material:
Si
Width:
3.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Maximum Gate Threshold Voltage:
1.4V
Package Type:
SON
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.9V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6.2 nC @ 4.5 V
Channel Type:
N
Length:
3.4mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
3 W
Series:
NexFET
Maximum Gate Source Voltage:
-8 V, +10 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
6.5 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
4mOhm @ 24A, 8V
Gate Charge (Qg) (Max) @ Vgs:
8.4 nC @ 4.5 V
Vgs(th) (Max) @ Id:
1.4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
CSD16327Q3 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
3V, 8V
edacadModelUrl:
/en/models/2809518
Drain to Source Voltage (Vdss):
25 V
Vgs (Max):
+10V, -8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3W (Ta)
standardLeadTime:
12 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1300 pF @ 12.5 V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-VSON-CLIP (3.3x3.3)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD16327
ECCN:
EAR99
