Category:
Power MOSFET
Dimensions:
6.35 x 5.4 x 0.95mm
Maximum Continuous Drain Current:
6.5 A
Transistor Material:
Si
Width:
5.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
475 mΩ
Package Type:
PowerFLAT
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
590 pF @ 100 V
Length:
6.35mm
Pin Count:
8
Typical Turn-Off Delay Time:
38 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
52 W
Series:
MDmesh M2
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
0.95mm
Typical Turn-On Delay Time:
11 ns
Forward Diode Voltage:
1.6V
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
475mOhm @ 3A, 10V
title:
STL13N65M2
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STL13N65M2 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5244744
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
52W (Tc)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
590 pF @ 100 V
Mounting Type:
Surface Mount
Series:
MDmesh™ M2
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 10 V
Supplier Device Package:
PowerFlat™ (5x6) HV
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
6.5A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STL13
ECCN:
EAR99
