Toshiba Semiconductor and Storage SSM3K72CFS,LF

SSM3K72CFS-LF Toshiba Semiconductor and Storage SSM3K72CFS,LF
Toshiba Semiconductor and Storage

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
N-Channel 60V 170mA (Ta) 150mW (Ta) Surface Mount SSM
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-75, SOT-416
Base Part Number:
SSM3K72
Gate Charge (Qg) (Max) @ Vgs:
0.35nC @ 4.5V
Rds On (Max) @ Id, Vgs:
3.9Ohm @ 100mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
17pF @ 10V
Mounting Type:
Surface Mount
Series:
U-MOSVII-H
Supplier Device Package:
SSM
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
170mA (Ta)
Customer Reference:
Power Dissipation (Max):
150mW (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3K72CFS,LF. It has typical 16 weeks of manufacturer standard lead time. It features n-channel 60v 170ma (ta) 150mw (ta) surface mount ssm. The typical Vgs (th) (max) of the product is 2.1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sc-75, sot-416. Base Part Number: ssm3k72. The maximum gate charge and given voltages include 0.35nc @ 4.5v. It has a maximum Rds On and voltage of 3.9ohm @ 100ma, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 17pf @ 10v. The product is available in surface mount configuration. The product u-mosvii-h, is a highly preferred choice for users. ssm is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 170ma (ta). The product carries maximum power dissipation 150mw (ta). This product use mosfet (metal oxide) technology.

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