Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
16 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
25 W
Series:
MDmesh M2
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
16.4mm
Width:
4.6mm
Length:
10.4mm
Maximum Drain Source Resistance:
450 mΩ
Package Type:
TO-220FP
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Forward Diode Voltage:
1.6V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
450mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
16 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STF12N60M2 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5455745
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
538 pF @ 100 V
standardLeadTime:
16 Weeks
Mounting Type:
Through Hole
Series:
MDmesh™ M2
Supplier Device Package:
TO-220FP
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STF12
ECCN:
EAR99
