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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK16G60W,RVQ. The FET features of the product include super junction. It features n-channel 600v 15.8a (ta) 130w (tc) surface mount d2pak. The typical Vgs (th) (max) of the product is 3.7v @ 790µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: tk16g60. The maximum gate charge and given voltages include 38nc @ 10v. It has a maximum Rds On and voltage of 190mohm @ 7.9a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. The product's input capacitance at maximum includes 1350pf @ 300v. The product is available in surface mount configuration. The product dtmosiv, is a highly preferred choice for users. d2pak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 15.8a (ta). The product carries maximum power dissipation 130w (tc). This product use mosfet (metal oxide) technology.
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