STMicroelectronics STW56N60M2-4

STW56N60M2-4 STMicroelectronics
STW56N60M2-4
STMicroelectronics

Product Information

Category:
Power MOSFET
Dimensions:
15.9 x 5.1 x 21.1mm
Maximum Continuous Drain Current:
52 A
Transistor Material:
Si
Width:
5.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
55 mΩ
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
91 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3750 pF @ 100 V
Length:
15.9mm
Pin Count:
4
Typical Turn-Off Delay Time:
119 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
350 W
Series:
MDmesh M2
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
21.1mm
Typical Turn-On Delay Time:
18 ns
Forward Diode Voltage:
1.6V
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-247-4
Rds On (Max) @ Id, Vgs:
55mOhm @ 26A, 10V
title:
STW56N60M2-4
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STW56N60M2-4 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/5244951
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
350W (Tc)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
3750 pF @ 100 V
Mounting Type:
Through Hole
Series:
MDmesh™ M2
Gate Charge (Qg) (Max) @ Vgs:
91 nC @ 10 V
Supplier Device Package:
TO-247-4
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
52A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STW56
ECCN:
EAR99
RoHs Compliant
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This is manufactured by STMicroelectronics. The manufacturer part number is STW56N60M2-4. It is of power mosfet category . The given dimensions of the product include 15.9 x 5.1 x 21.1mm. While 52 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.1mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 4v of maximum gate threshold voltage. It provides up to 55 mω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 91 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 3750 pf @ 100 v . Its accurate length is 15.9mm. It contains 4 pins. Whereas, its typical turn-off delay time is about 119 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 350 w maximum power dissipation. The product mdmesh m2, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 21.1mm. In addition, it has a typical 18 ns turn-on delay time . Its forward diode voltage is 1.6v . It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-247-4. It has a maximum Rds On and voltage of 55mohm @ 26a, 10v. The typical Vgs (th) (max) of the product is 4v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 350w (tc). It has a long 16 weeks standard lead time. The product's input capacitance at maximum includes 3750 pf @ 100 v. The product mdmesh™ m2, is a highly preferred choice for users. The maximum gate charge and given voltages include 91 nc @ 10 v. to-247-4 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 52a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stw56, a base product number of the product. The product is designated with the ear99 code number.

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STW56N60M2-4 N-channel 600 V 52 A MDmesh Power MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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STW56N60M2-4(Datasheets)

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