Category:
Power MOSFET
Dimensions:
3.5 x 3.5 x 0.9mm
Maximum Continuous Drain Current:
19 A
Transistor Material:
Si
Width:
3.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Drain Source Resistance:
6.4 mΩ
Package Type:
VSCONP
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
13 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1780 pF @ 15 V
Length:
3.5mm
Pin Count:
8
Forward Transconductance:
76S
Typical Turn-Off Delay Time:
20 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.8 W
Series:
NexFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.9mm
Typical Turn-On Delay Time:
4 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
4.8mOhm @ 16A, 10V
title:
CSD17577Q3AT
Vgs(th) (Max) @ Id:
1.8V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
CSD17577Q3AT Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/4968292
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.8W (Ta), 53W (Tc)
standardLeadTime:
12 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2310 pF @ 15 V
Mounting Type:
Surface Mount
Series:
NexFET™
Gate Charge (Qg) (Max) @ Vgs:
35 nC @ 10 V
Supplier Device Package:
8-VSONP (3x3.3)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
35A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD17577
ECCN:
EAR99
