Maximum Continuous Drain Current:
3.5 A
Width:
10.92mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
850 V
Maximum Gate Threshold Voltage:
5.5V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
7 @ 10 V nC
Channel Type:
N
Length:
10.41mm
Pin Count:
2 + Tab
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
150 W
Series:
HiperFET
Maximum Gate Source Voltage:
±30 V
Height:
4.7mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.4V
Maximum Drain Source Resistance:
2.5 Ω
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
2.5Ohm @ 2A, 10V
title:
IXFA4N85X
Vgs(th) (Max) @ Id:
5.5V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
850 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
150W (Tc)
standardLeadTime:
32 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
247 pF @ 25 V
Mounting Type:
Surface Mount
Series:
HiPerFET™, Ultra X
Gate Charge (Qg) (Max) @ Vgs:
7 nC @ 10 V
Supplier Device Package:
TO-263 (IXFA)
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
3.5A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFA4N85
ECCN:
EAR99
