Texas Instruments CSD17313Q2Q1

CSD17313Q2Q1 Texas Instruments
Texas Instruments

Product Information

Detailed Description:
N-Channel 30V 5A (Tc) 2.3W (Ta) Surface Mount 6-WSON (2x2)
Vgs(th) (Max) @ Id:
1.8V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-WDFN Exposed Pad
Base Part Number:
CSD17313
Gate Charge (Qg) (Max) @ Vgs:
2.7nC @ 4.5V
Rds On (Max) @ Id, Vgs:
30mOhm @ 4A, 8V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
3V, 8V
Manufacturer:
Texas Instruments
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds:
340pF @ 15V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q100, NexFET™
Supplier Device Package:
6-WSON (2x2)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
5A (Tc)
Customer Reference:
Power Dissipation (Max):
2.3W (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Texas Instruments. The manufacturer part number is CSD17313Q2Q1. It features n-channel 30v 5a (tc) 2.3w (ta) surface mount 6-wson (2x2). The typical Vgs (th) (max) of the product is 1.8v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-wdfn exposed pad. Base Part Number: csd17313. The maximum gate charge and given voltages include 2.7nc @ 4.5v. It has a maximum Rds On and voltage of 30mohm @ 4a, 8v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 3v, 8v. The texas instruments's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is +10v, -8v. The product's input capacitance at maximum includes 340pf @ 15v. The product is available in surface mount configuration. The product automotive, aec-q100, nexfet™, is a highly preferred choice for users. 6-wson (2x2) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 5a (tc). The product carries maximum power dissipation 2.3w (ta). This product use mosfet (metal oxide) technology.

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Marking Standardization 29/Jan/2015(PCN Design/Specification)

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