Maximum Continuous Drain Current:
360 A
Width:
25.07mm
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
SOT-227
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
525 nC @ 10 V
Channel Type:
N
Length:
38.23mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Screw Mount
Maximum Power Dissipation:
830 W
Series:
GigaMOS Trench HiperFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
9.6mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
2.6 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SOT-227-4, miniBLOC
Rds On (Max) @ Id, Vgs:
2.6mOhm @ 180A, 10V
Gate Charge (Qg) (Max) @ Vgs:
505 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
830W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
36000 pF @ 25 V
standardLeadTime:
45 Weeks
Mounting Type:
Chassis Mount
Series:
HiPerFET™, Trench
Supplier Device Package:
SOT-227B
Current - Continuous Drain (Id) @ 25°C:
360A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFN360
ECCN:
EAR99
