Category:
Power MOSFET
Dimensions:
38.23 x 25.07 x 9.6mm
Maximum Continuous Drain Current:
49 A
Transistor Material:
Si
Width:
25.07mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Maximum Gate Threshold Voltage:
6.5V
Package Type:
SOT-227B
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
270 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
13600 pF @ 25 V
Length:
38.23mm
Pin Count:
4
Typical Turn-Off Delay Time:
62 ns
Mounting Type:
Panel Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
780 W
Series:
HiperFET, Q3-Class
Maximum Gate Source Voltage:
±30 V
Height:
9.6mm
Typical Turn-On Delay Time:
54 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
140 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-227-4, miniBLOC
Rds On (Max) @ Id, Vgs:
140mOhm @ 31A, 10V
title:
IXFN62N80Q3
Vgs(th) (Max) @ Id:
6.5V @ 8mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
960W (Tc)
standardLeadTime:
46 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
13600 pF @ 25 V
Mounting Type:
Chassis Mount
Series:
HiPerFET™, Q3 Class
Gate Charge (Qg) (Max) @ Vgs:
270 nC @ 10 V
Supplier Device Package:
SOT-227B
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
49A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFN62
ECCN:
EAR99
